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SILICON THIN FILM SOLAR TECHNOLOGY
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- Advantages of silicon thin film solar technology
- Significantly lower use
- Cost-effective
- Unrestricted availability of raw materials
- Wide-area deposit of semiconductor possible
- Modules with no cell assembly
- Less handling needed In fab
- Non-toxic and clear
- Suitable for architectural applications
- Works in all weather conditions, including low light and cloudy conditions
- Dual junction amorphous technology ensure less power degradation
- Laser edge isolation technology better protect the product from outdoor environment
- Weather resitant double glass lamination with EVA Temper glass on both fron and back
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A-Si solar module Dual Junction with edge laser isolation (IEC 61646 IEC61730 CE, ROHS)
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| Dimension (mm) |
Pm (W) |
Voc (V) |
Isc (A)
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Vmpp (V) |
Weight (Kgs) |
Max Power System (V) |
| 643x1255x38 |
32±1 |
57 |
1.0 |
42 |
14.7 |
1000.0 |
| 643x1255x38 |
34±1 |
58 |
1.0 |
43 |
14.7 |
1000.0 |
| 643x1255x38 |
36±1 |
59 |
1.0 |
44 |
14.7 |
1000.0 |
| 643x1255x38 |
38±1 |
60 |
1.0 |
45 |
14.7 |
1000.0 |
| 643x1255x38 |
40±1 |
61 |
1.0 |
46 |
14.7 |
1000.0 |
Mono-crystalline solar module (IEC 61215 IEC61730 CE, ROHS)
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| Model |
TPS-105-160W |
TPS-105-170W |
TPS-105-180W |
| Normal Power (W) |
160.0 |
170.0 |
180.0 |
Open Circuit Voltage (V)
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43.2 |
43.2 |
43.4 |
| Short Circuit Current (A) |
4.9 |
5.03 |
5.03 |
Maximum Power Voltage (V)
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34.4 |
34.4 |
35.2 |
| Maximum System Voltage (V) |
1000.0 |
1000.0 |
1000.0 |
Dimensions (mm)
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W809*L1581*D40 |
W809*L1581*D40 |
W809*L1581*D40 |
Weight (Kg)
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14.5 |
14.5 |
14.5 |
| Sealed Lead Acid Battery |
24V |
24V |
24V |
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A-Si Solar module
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Mono-crystalline solar module |
| Temperature coefficient of Isc |
+0.09%/ºC |
+1.0%/ºC |
| Temperature coefficient of Voc |
-0.28%/ºC |
-0.38%/ºC |
Temperature coefficient of Power
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-0.19%/ºC |
-0.47%/ºC |
 
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